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  Description :
Development of DLTS system. Development of high quality Schottky and Ohmic contacts to III-V group semiconductor materials for electronic and optoelectronic devices applications. Analysis of optical properties of InGaN/GaN based light emitting diodes LEDs using Photoluminescence PL techniques. Investigations of deep level defects and their properties in III-V group semiconductor materials and devices using DLTS technique. Analysis of reverse and forward current transport mechanisms in metal/semiconductor andLED structures in a wide temperature range. Development of Quantum Functional Materials.

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